technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com pnp small signal silicon transistor qualified per mil-prf-19500/511 t4-lds-0150 rev. 1 (092064) page 1 of 4 devices levels 2n4261 2N4261UB jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditio ns symbol value unit collector-emitter voltage v ceo 15 vdc collector-base voltage v cbo 15 vdc emitter-base voltage v ebo 4.5 vdc collector current i c 30 madc total power dissipation @ t a = +25c p t 0.2 w operating & storage junction temperature range t op , t stg -65 to +200 c note: consult 19500/511 for thermal performance curves. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 10madc v (br)ceo 15 vdc collector-base cutoff current v cb = 15vdc i cbo 10 adc emitter-base cutoff current v eb = 4.5vdc i ebo 10 adc collector-emitter cutoff current v ce = 10vdc, v be = 0.4vdc i cex1 50 adc collector-emitter cutoff current v ce = 10vdc, v be = 2.0vdc i cex2 5 adc to-72 2n4261 3 pin 2N4261UB
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com pnp small signal silicon transistor qualified per mil-prf-19500/511 t4-lds-0150 rev. 1 (092064) page 2 of 4 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit on characteristics (4) forward-current transfer ratio i c = 1.0madc, v ce = 1vdc 25 i c = 10madc, v ce = 1vdc 30 150 i c = 30madc, v ce = 1vdc 20 h fe collector-emitter saturation voltage i c = 1madc, i b = 0.1madc i c = 10madc, i b = 1.0madc v ce(sat) 0.15 0.35 vdc base-emitter saturation voltage (non-saturated) v ce = 1vdc, i c = 1madc v ce = 1vdc, i c = 10madc v be 0.6 0.80 1.0 vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of small?signal forward current transfer ratio i c = 10madc, v ce = 10vdc, f = 100mhz |h fe | 20 output capacitance v cb = 4vdc, i e = 0, 100khz f 1.0mhz c obo 2.5 pf input capacitance v eb = 0.5vdc, i c = 0, 100khz f 1.0mhz c ibo 2.5 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on time v cc = 17vdc; i c = 10madc t on 2.5 s turn-off time v cc = 17vdc; i c = 10madc t off 3.5 s (4) pulse test: pulse width = 300 s, duty cycle 2.0%.
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com pnp small signal silicon transistor qualified per mil-prf-19500/511 t4-lds-0150 rev. 1 (092064) page 3 of 4 package dimensions notes: 1 dimension are in inches. 2 millimeters are given for general information only. 3 beyond r (radius) maximum, th shall be held for a minimum length of .011 (0.28 mm). 4 dimension tl measured from maximum hd. 5 body contour optional within zone defined by hd, cd, and q. 6 leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7 dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8 all four leads. 9 dimension r (radius) applies to both inside corners of tab. 10 in accordance with asme y14.5m , diameters are equivalent to x symbology. 11 lead 1 = emitter, lead 2 = base, lead 3 = coll ector, lead 4 = case (electrically connected). figure 1. physical dimensions for 2n4261 (to-72) . dimensions symbol inches millimeters notes min max min max cd .178 .195 4.52 4.95 5 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 5 lc .100 tp 2.54 tp 7, 8 ld .016 .021 .406 .533 7, 8 ll .500 .750 12.70 19.05 7, 8 lu .016 .019 .41 .48 l1 .050 1.27 l2 .250 6.35 p .100 2.54 q .040 1.02 5 tl .028 .048 .71 1.22 tw .036 .046 .91 1.17 r .007 .18 45 tp
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com pnp small signal silicon transistor qualified per mil-prf-19500/511 t4-lds-0150 rev. 1 (092064) page 4 of 4 dimensions dimensions ltr. inches millimeters note ltr. inches millimeters note min max min max min max min max bh .046 .056 1.17 1.42 ls1 .035 .040 0.89 1.02 bl .115 .128 2.92 3.25 ls2 .071 .079 1.80 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 0.20 cw .108 2.74 r1 .012 0.31 ll1 .022 .038 0.56 0.96 r2 .022 0.56 ll2 .017 .035 0.43 0.89 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = shielding connected to the lid. 4 in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 2. physical dimensions for 2N4261UB, surface mount .
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